Abstract

Samples of tricadmium diarsenide with MnAs nanogranules (44.7 mol % MnAs) are synthesized. The morphology of the samples is studied by X-ray phase analysis and electron microscopy. The electrical properties of tricadmium diarsenide with MnAs nanogranules are studied in a range of temperatures of 77–372 K. It is found that the voltammetric characteristics are symmetrical relative to the inversion of the voltage sign at this temperature, and their deviation from ohmicity at a certain threshold voltage and decrease in the region of ohmicity with the growth in temperature are determined by the increase in the breakdown probability in a field above 5 × 10⁴ V/m.

中文翻译：

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MnAs纳米颗粒合成三砷化三镉的电学性能

摘要

合成了具有MnAs纳米颗粒（44.7 mol％MnAs）的二砷化三镉样品。通过X射线相分析和电子显微镜研究样品的形态。在77–372 K的温度范围内研究了二砷化三镉与MnAs纳米颗粒的电学性质。发现，伏安特性相对于该温度下电压符号的反转是对称的，并且它们在室温下与欧姆性背离。在5×10 ⁴ V / m以上的电场中，击穿概率的增加决定了一定的阈值电压以及随着温度的升高欧姆区域的减小。