This work presents a new TFET architecture which not only diminishes ambipolar current (I_AMB) but also shows high on state current (I_ON), high ratio of I_ON to I_OFF, and less off-state current (I_OFF). Initially, to show the effects on ambipolarity and on- and off-state current, a comparative analysis of transfer characteristics among the proposed, conventional, and the heterojunction (HJ) TFET has been done. The effects of different gate material work functions and gate oxide thicknesses on I_AMB for the proposed TFET and the HJ TFET with no underlap are examined. Further, to analyze the effect of ambipolarity in the high-frequency figure of merit (FOM), a comparative analysis on RF parameters such as gate–drain capacitance (C_gd), cutoff frequency (f_T), total gate capacitance (C_gg), and the intrinsic time delay (τ) for both of the devices (proposed and HJ TFETs) has been studied.

这项工作提出了一种新的TFET体系结构，该体系结构不仅减小了双极性电流（I _AMB），而且还显示了高导通状态电流（I _ON），I _ON与I _OFF的高比率以及更低的截止态电流（I _OFF）。最初，为了显示对双极性以及通态和断态电流的影响，已对提议的，传统的和异质结（HJ）TFET之间的传输特性进行了比较分析。不同栅极材料功函数和栅极氧化物厚度对I _AMB的影响对于拟议的TFET和HJ TFET，没有重叠的情况进行了检查。此外，为了分析双极性在高频品质因数（FOM）中的影响，对射频参数进行比较分析，例如栅极-漏极电容（C _gd），截止频率（f _T），总栅极电容（C _gg），并且已经研究了两种器件（建议的TFET和HJ TFET）的固有时间延迟（τ）。