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Temperature effect on Young’s modulus of surface oxidized silicon nano-films
Modern Physics Letters B ( IF 1.8 ) Pub Date : 2020-08-05 , DOI: 10.1142/s0217984920503352
Kaixiu Ye 1 , Jing Wang 1 , Yanliang Li 1
Affiliation  

Based on the semi-continuum model, the effect of temperature on Young’s modulus in the presence of oxide layer in silicon nano-films was studied theoretically by using the anharmonic Keating deformation potential, and the effect of oxide layer on Young’s modulus was also studied. The results show that Young’s modulus of the nano-film is inversely proportional to its temperature, which decreases with the increase of temperature. And with the number of oxide layer increasing, Young’s modulus of silicon nano-film increases. At the same thickness and layer numbers, Young’s modulus of the films with oxide layer is larger than that of pure silicon nano-films. The existence of oxide layer leads to the increase of Young’s modulus of the silicon nano-film.

中文翻译:

温度对表面氧化硅纳米薄膜杨氏模量的影响

基于半连续模型,利用非谐基廷变形势理论研究了温度对硅纳米薄膜氧化层杨氏模量的影响,并研究了氧化层对杨氏模量的影响。结果表明,纳米薄膜的杨氏模量与其温度成反比,随温度的升高而减小。并且随着氧化层数量的增加,硅纳米薄膜的杨氏模量增加。在相同的厚度和层数下,具有氧化层的薄膜的杨氏模量大于纯硅纳米薄膜。氧化层的存在导致硅纳米薄膜的杨氏模量增加。
更新日期:2020-08-05
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