The current paper reports the prospects of a multiple-graphene-layer (MGL) based vertically doped p ++ –n–n – –n ++ avalanche photo-sensor in visible wavelength region (300 nm–800 nm). High carrier mobility, intrinsic optical and mechanical properties in graphene at room temperature, have made this material promising for various novel applications. The authors have used an indigenously developed and experimentally verified quantum-corrected field maximum classical drift-diffusion (QCFMCDD) mathematical model for studying the optical characteristics of MGL based p ++ –n–n – –n ++ avalanche photo-diode sensor. The validity of the simulator is established through a comparative study between the experimental and analytical observations under similar operating (structural/electrical/thermal) conditions. Additionally, the superiority of the QCFMCDD model over the conventional classical drift-diffusion model is est...

中文翻译：

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Si / 3C-SiC（100）衬底上基于多石墨烯层的p ++ –n– n – –n ++器件：一种高度灵敏的可见光传感器

目前的论文报道了在可见光波长区域（300 nm–800 nm）中基于多层石墨烯层（MGL）的垂直掺杂的p ++ –n–n – –n ++雪崩光电传感器的前景。高载流子迁移率，室温下石墨烯的固有光学和机械性能使这种材料有望用于各种新颖的应用。作者使用了一个本地开发和实验验证的量子校正场最大经典漂移扩散（QCFMCDD）数学模型来研究基于MGL的p ++ –n–n ––n ++雪崩光电二极管传感器的光学特性。通过在相似的操作（结构/电气/热）条件下对实验观察结果和分析观察结果进行比较研究，可以确定模拟器的有效性。另外，