We have grown thin films of CaAgAs by molecular beam epitaxy, which was theoretically proposed to be a topological insulator. The temperature dependence of resistivity and the carrier concentration at 4 K were similar to the reported results of bulk samples. However, the magnetoresistance exhibited a steep increase at low magnetic fields, a behavior not observed for bulk samples. This steep increase of resistivity is ascribable to the weak antilocalization effect and provides clues to the nature of the topological surface state of CaAgAs.

中文翻译：

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分子束外延法生长 CaAgAs 薄膜


我们通过分子束外延生长了 CaAgAs 薄膜，理论上认为它是拓扑绝缘体。 4 K 时电阻率和载流子浓度的温度依赖性与散装样品的报告结果相似。然而，磁阻在低磁场下表现出急剧增加，这是在块状样品中未观察到的行为。电阻率的急剧增加归因于微弱的反定域效应，并为了解 CaAgAs 拓扑表面态的性质提供了线索。