A low-temperature-grown GaAs (LTG-GaAs) terahertz (THz) photoconductive antenna device with layer structure consisting of doped buffer demonstrated enhanced emission intensity and detection sensitivity. As THz emitter, a 116% increase is exhibited by the LTG-GaAs with doped buffer relative to its undoped counterpart at 9 V bias and 0.8 mW pump power with spectral distribution extending to ∼3 THz. As a THz detector, a dynamic range of 55 dB is obtained at 0.5 THz, which is 5 dB higher than its undoped counterpart. The device proved effective as a THz emitter at low operating bias and pump power while its detection characteristics are acceptable even at low incident THz powers.

中文翻译：

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具有掺杂缓冲器的三层低温生长的GaAs太赫兹发射器和检测器装置

具有由掺杂缓冲剂组成的层结构的低温生长的GaAs（LTG-GaAs）太赫兹（THz）光电导天线装置显示出增强的发射强度和检测灵敏度。作为THz发射器，在9 V偏置和0.8 mW泵浦功率下，具有掺杂缓冲液的LTG-GaAs与未掺杂的LTG-GaAs相比增加了116％，频谱分布扩展到约3 THz。作为THz检测器，在0.5 THz时可获得55 dB的动态范围，比未掺杂的动态范围高5 dB。该器件被证明可在低工作偏置和泵浦功率下作为THz发射器有效，而其检测特性即使在低入射THz功率下也可以接受。