Chemical vapor deposition (CVD) is the most effective method for the synthesis of large-scale and high-quality graphene. However, the growth temperature of graphene is high, about 1000 °C, using conventional CVD, meaning that it is expensiveand thus limits the use of the material. The synthesis of CVD graphene at low temperatures(<600°C) is therefore the focus of many researchers. Recent research on the production of CVD graphene at low temperaturesis reviewed. Comprehensive comparison, analysis and discussion of quality, number of layers, domain size and the uses of graphenesynthesized at low temperatures using different precursors (gas, liquid and solids) and substrates (metals, metal alloys and dielectric materials) are given for different CVD methods (atmospheric pressure CVD, plasma enhanced CVD, catalyst-enhanced CVD, surface wave plasma CVD, microwave plasma CVD, radio frequency plasma enhanced CVD and electron cyclotron resonance CVD). The future prospects and challenges of preparing graphene at low temperatures are discussed.

化学气相沉积（CVD）是合成大规模高质量石墨烯的最有效方法。然而，使用常规CVD，石墨烯的生长温度高，约1000℃，这意味着其昂贵并且因此限制了该材料的使用。因此，低温（<600°C）下CVD石墨烯的合成成为许多研究人员的研究重点。综述了低温下CVD石墨烯的制备研究。针对不同的CVD方法，对使用不同的前体（气体，液体和固体）和基材（金属，金属合金和介电材料）在低温下合成的石墨烯的质量，层数，畴尺寸和石墨烯的用途进行了全面的比较，分析和讨论。 （大气压CVD，等离子增强CVD，催化剂增强CVD，表面等离子体CVD，微波等离子体CVD，射频等离子体增强CVD和电子回旋共振CVD）。讨论了在低温下制备石墨烯的未来前景和挑战。