Abstract

The process of the Pd-assisted etching of silicon in a solution containing HF and H₂O₂ is investigated. It is shown that the morphology of the forming layers is affected by such factors as the etching duration and solution temperature. It is shown that Pd nanoparticles remain on the walls and bottom of the pores in the course of Pd-assisted etching. Such a structure, as is shown in earlier works, possesses the electrooxidation property of ethanol, which gives grounds to affirm that the forming structures are Schottky-type structures. A model of Pd-assisted etching is determined with the help of the electrochemical equilibrium diagram in the Si–HF(aq.) system. It is shown that the polishing dissolution of Si occurs without the formation of intermediate products (SiO₂).

中文翻译：

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钯辅助化学刻蚀形成的por-Si形貌的形成温度的影响

摘要

研究了含HF和H ₂ O ₂的溶液中硅的Pd辅助蚀刻的过程。结果表明，形成层的形貌受蚀刻时间和溶液温度等因素的影响。结果表明，在Pd辅助蚀刻过程中，Pd纳米颗粒保留在孔的壁和底部。如先前工作中所示，这种结构具有乙醇的电氧化特性，这为证实形成结构是肖特基型结构奠定了基础。利用Si–HF（aq。）系统中的电化学平衡图确定了Pd辅助蚀刻的模型。结果表明，在没有形成中间产物（SiO ₂）。