Abstract

The results of experimental and theoretical investigations of terahertz-emission-spectrum tuning by means of uniaxial stress of a silicon crystal doped with shallow bismuth donors are presented for the case of intracenter optical excitation. The frequency tuning of two emission lines of the bismuth donor is shown for the case of uniaxial strain along the [001] crystallographic direction. The cross sections of stimulated Raman scattering for uniaxially stressed bismuth-doped silicon are calculated.

中文翻译：

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单轴应力Si：Bi中心光激发下太赫兹激发发射的频率调谐

摘要

对于中心内光激发的情况，提出了通过掺有浅铋供体的硅晶体的单轴应力来进行太赫兹发射光谱调谐的实验和理论研究的结果。对于沿[001]晶体学方向的单轴应变的情况，示出了铋供体的两条发射线的频率调谐。计算了单轴应力铋掺杂硅的受激拉曼散射截面。