Abstract

The possibility of the nonresonance phase conjugation of light occurring in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial ZnO films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected. The dependences of the phase-conjugation signal intensity on the incident photon energy and laser-pumping intensity are studied. Interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.

中文翻译：

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光学泵浦ZnO薄膜中光的非共振相位共轭

摘要

理论上和实验上都表明了在激发的半导体介质中发生光的非共振相位共轭的可能性。在室温下用氮气激光器泵浦的外延ZnO薄膜中，检测到可见光和红外光谱区域中光的诱导相共轭。研究了相位共轭信号强度对入射光子能量和激光泵浦强度的依赖性。提出了对在半导体介质中激光诱导的自由电荷载流子处的光的吸收和折射的结果的解释。