The electronic transport and field emission properties of a single-crystalline GdB₄₄Si₂ nanowire are studied. The atomic structure and elemental composition of the GdB₄₄S_i2 nanowire are characterized by transmission electron microscopy (TEM) using atomic imaging, energy-dispersive X-ray spectroscopy (EDS), and electron energy-loss spectroscopic (EELS) mapping. The electrical conductivity of the single GdB₄₄Si₂ nanowire is in the range of 46.8–60.1 S m⁻¹. The in situ TEM field emission measurement reveals that it has a low work function of 2.4 eV. To realize a converged electron emission, a field evaporation pretreatment was used to clean the emission surface and to make a sharpened tip. The field emission probe measurement results show that the electron emission from the sharp GdB₄₄Si₂ nanowire is converged to a single field emission spot and it has a work function of 2.6 eV which is in agreement with the in situ TEM measurement. The stability of field emission current is also very good with a fluctuation of 1.4% in 20 min. With a low work function and stable emission current, the GdB₄₄Si₂ nanowire shows great promise for field emission applications.

中文翻译：

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单晶GdB44Si2纳米线的导电和场发射。

研究了单晶GdB ₄₄ Si ₂纳米线的电子传输和场发射特性。GdB ₄₄ S _i2纳米线的原子结构和元素组成通过使用原子成像，能量色散X射线光谱（EDS）和电子能量损失谱（EELS）映射的透射电子显微镜（TEM）进行表征。单根GdB ₄₄ Si ₂纳米线的电导率在46.8–60.1 S m ^-1的范围内。在原位TEM场发射测量表明它具有2.4 eV的低功函。为了实现会聚的电子发射，采用场蒸发预处理清洁发射表面并制成尖锐的尖端。场发射探针的测量结果表明，来自尖锐的GdB ₄₄ Si ₂纳米线的电子发射会聚到单个场发射点，其功函为2.6 eV，与原位TEM测量一致。场发射电流的稳定性也非常好，在20分钟内波动1.4％。GdB ₄₄ Si ₂纳米线具有较低的功函和稳定的发射电流，对场发射应用具有广阔的前景。