Heterojunction diodes are constructed by growing n-type (nitrogen-doped) ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films onto p-type Si substrates in nitrogen and hydrogen mixed-gases by coaxial arc plasma deposition. The fabricated heterojunctions are analyzed regarding their film morphology and electrical properties. The complex structure of UNCD/a-C:H films, which consists of nano-sized-sp 3 diamond grains and sp 2 -grain boundaries (GBs), makes it difficult to separate their contribution to electrical conductivity of the films using conventional characterization methods. In this paper we characterize the n-type UNCD/p-type Si heterojunction diode by employing impedance spectroscopy method, which can isolate the differing components that contribute to the overall conductivity of the film. The impedance spectroscopy is measured in the frequency range of 100 Hz to 2 MHz, with AC small signal superimpose on DC bias vol...

中文翻译：

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n型（氮掺杂）超纳米晶金刚石/ p型Si异质结二极管的阻抗谱分析

异质结二极管是通过同轴电弧等离子体沉积在氮气和氢气混合气体中将n型（掺杂氮的）超纳米晶金刚石（UNCD）/氢化非晶碳（aC：H）复合膜生长到p型Si衬底上而构成的。分析了所制造的异质结的薄膜形态和电性能。UNCD / aC：H薄膜的复杂结构由纳米级的sp 3金刚石晶粒和sp 2晶界（GBs）组成，因此很难使用传统的表征方法分离它们对薄膜导电性的贡献。在本文中，我们通过采用阻抗光谱法来表征n型UNCD / p型Si异质结二极管，该方法可以隔离有助于薄膜整体导电性的不同成分。