We present experimental and numerical studies of broad-area semiconductor lasers with chaotic ray dynamics. The emission intensity distributions at the cavity boundaries are measured and compared to ray tracing simulations and numerical calculations of the passive cavity modes. We study two different cavity geometries, a D-cavity and a stadium, both of which feature fully chaotic ray dynamics. While the far-field distributions exhibit fairly homogeneous emission in all directions, the emission intensity distributions at the cavity boundary are highly inhomogeneous, reflecting the non-uniform intensity distributions inside the cavities. The excellent agreement between experiments and simulations demonstrates that the intensity distributions of wave-chaotic semiconductor lasers are primarily determined by the cavity geometry. This is in contrast to conventional Fabry-Perot broad-area lasers for which the intensity distributions are to a large degree determined by the nonlinear interaction of the lasing modes with the semiconductor gain medium.

中文翻译：

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波混沌半导体微腔中激光模式的空间结构

我们展示了具有混沌射线动力学的广域半导体激光器的实验和数值研究。测量腔边界处的发射强度分布，并将其与无源腔模式的光线追踪模拟和数值计算进行比较。我们研究了两种不同的腔体几何形状，即 D 型腔和体育场，它们都具有完全混沌的射线动力学特性。虽然远场分布在所有方向上都表现出相当均匀的发射，但腔边界处的发射强度分布非常不均匀，反映了腔内的不均匀强度分布。实验和模拟之间的极好一致性表明，混沌波半导体激光器的强度分布主要由腔几何形状决定。