We studied magnetic tunnel junctions (MTJs) with a MgO(001) barrier and metastable bcc Co 3 Mn(001) disordered alloy electrodes. A tunnel magnetoresistance (TMR) ratio was approximately 200%–250% observed at room temperature. We successfully observed the TMR ratio greater than 600% at 10 K which was higher than the past reported value of MgO-based MTJs with ultrathin bcc Co(001) electrodes. However, our experimental value was still much lower than the past theoretical prediction in bcc Co/MgO/Co(001) MTJs. We discuss some differences in the bulk band structure affecting the TMR effect for bcc Co and bcc Co 3 Mn.

中文翻译：

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具有亚稳态bcc Co 3 Mn电极的磁性隧道结

我们研究了具有MgO（001）势垒和亚稳态bcc Co 3 Mn（001）无序合金电极的磁性隧道结（MTJ）。在室温下观察到的隧道磁阻（TMR）比率约为200％–250％。我们成功地观察到在10 K时TMR比率大于600％，这比以前报道的带有超薄bcc Co（001）电极的基于MgO的MTJ的值更高。但是，我们的实验值仍远低于过去在密件抄送Co / MgO / Co（001）MTJ中的理论预测值。我们讨论了影响bcc Co和bcc Co 3 Mn的TMR效应的体带结构的一些差异。