DRAM technology has developed rapidly in recent years. Several industrial solutions offer 3D packaging of DRAM and some are envisioning the integration of CPU and DRAM on the same die. These solutions allow higher density and better performance and also lower power consumption in DRAM designs. However, accurate simulation tools have not kept up with DRAM technology, especially for the modeling of 3D DRAMs. In this letter we present a cycle-accurate, validated DRAM simulator, and DRAMsim3, which offers the best simulation performance and feature sets among existing cycle-accurate DRAM simulators. DRAMsim3 is also the first DRAM simulator to offer runtime thermal modeling alongside with performance modeling.

中文翻译：

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DRAMsim3：周期精确、具有热功能的 DRAM 模拟器

DRAM技术近年来发展迅速。一些工业解决方案提供 DRAM 的 3D 封装，有些正在设想在同一芯片上集成 CPU 和 DRAM。这些解决方案允许在 DRAM 设计中实现更高的密度和更好的性能以及更低的功耗。然而，精确的仿真工具并没有跟上 DRAM 技术的步伐，尤其是对于 3D DRAM 的建模。在这封信中，我们展示了一个周期精确的、经过验证的 DRAM 模拟器和 DRAMsim3，它在现有的周期精确 DRAM 模拟器中提供了最佳的模拟性能和功能集。DRAMsim3 还是第一个提供运行时热建模和性能建模的 DRAM 模拟器。