One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices,ACS Applied Electronic Materials

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One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-08-04 , DOI: 10.1021/acsaelm.0c00499
Jun Tae Jang ₁ , Donguk Kim ₁ , Woo Sik Choi ₁ , Sung-Jin Choi ₁ , Dong Myong Kim ₁ , Yoon Kim ₂ , Dae Hwan Kim ₁

Affiliation

Various memristor-based synaptic devices have been proposed for implementing a neuromorphic system. However, memristor devices typically suffer from various inherent problems such as nonlinearity and asymmetry of conductance modulation and the sneak path issue of the crossbar array structure. To solve these drawbacks, we propose a one transistor–two memristor (1T2M) synaptic device, its array structure, and its operation method for neuromorphic system applications. For the channel of the transistor and switching layer of the memristor, amorphous InGaZnO was used. The proposed 1T2M synaptic device exhibited more linear and symmetric characteristics of conductance modulation compared with the single memristor device. In addition, the proposed array structure was robust to the sneak path problem. To investigate the switching mechanism, a depth profile analysis of X-ray photoelectron spectroscopy was conducted for each resistance state. Finally, we confirmed an excellent pattern recognition accuracy by using an artificial neural network simulation.

中文翻译：

基于非晶铟-镓-氧化锌的晶体管-忆阻器用于神经形态突触设备

已经提出了各种基于忆阻器的突触装置来实现神经形态系统。然而，忆阻器器件通常遭受各种固有问题，例如电导调制的非线性和不对称性以及交叉开关阵列结构的潜行问题。为了解决这些缺点，我们提出了一种用于神经形态系统应用的单晶体管二忆阻器（1T2M）突触设备，其阵列结构及其操作方法。对于忆阻器的晶体管和开关层的沟道，使用非晶InGaZnO。与单个忆阻器设备相比，拟议的1T2M突触设备表现出更多的线性和对称的电导调制特性。另外，所提出的阵列结构对于潜行路径问题是鲁棒的。要研究切换机制，针对每个电阻状态进行了X射线光电子能谱的深度分布分析。最后，我们通过使用人工神经网络仿真确认了出色的模式识别精度。

更新日期：2020-09-22

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