Abstract The realization of Ge n-channel MOSFETs (nMOSFET) encounters many challenges, such as poorer interface quality and thermal stability, in comparison with Ge p-channel MOSFETs. Since the oxygen vacancy and interface trap in gate dielectric can be effectively passivated by a nitrogen incorporation, a germanium oxynitride (GeON) starting interfacial layer with suitable nitrogen content was proposed to improve the interface quality of Ge nMOSFETs in this work. A low equivalent oxide thickness of ~0.6 nm, a low gate leakage current of ~6 × 10−4 A/cm2, and a low subthreshold swing of ~120 mV/dec in Ge nMOSFET can be simultaneously achieved by incorporating a nitrogen content of ~20.4% in the GeON starting interfacial layer.

中文翻译：

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在起始界面层具有合适的氮含量时，改善了 Ge nMOSFET 的电气特性

摘要 与Ge p 沟道MOSFET 相比，Ge n 沟道MOSFET (nMOSFET) 的实现面临许多挑战，例如较差的界面质量和热稳定性。由于氮掺入可以有效地钝化栅极电介质中的氧空位和界面陷阱，因此在这项工作中提出了具有合适氮含量的氮氧化锗 (GeON) 起始界面层来改善 Ge nMOSFET 的界面质量。通过在 Gen MOSFET 中加入约 0.6 nm 的氮含量，可以同时实现约 0.6 nm 的低等效氧化物厚度、约 6 × 10−4 A/cm2 的低栅极漏电流和约 120 mV/dec 的低亚阈值摆幅在 GeON 起始界面层中约 20.4%。