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Tailored β-diketones as effective surface passivation for solution processed zinc oxide thin film transistors
Organic Electronics ( IF 2.7 ) Pub Date : 2020-08-03 , DOI: 10.1016/j.orgel.2020.105906
Jonas Köhling , Vladislav Jovanov , Nataliya Kalinovich , Gerd-Volker Röschenthaler , Veit Wagner

Diketone passivation of defect states at the surface of solution-processed zinc oxide thin film transistors is investigated. Trifluoroacetylacetophenone is used as the basis for passivating molecules due to its easy chemical variability on the phenyl ring. Electron withdrawing or donating substituents can be introduced at the phenyl ring to vary the electron density at the ketone anchoring positions of the passivating molecule. The relative change of electron density is quantified by DFT calculations for different substituents. Experimentally thin zinc oxide films are prepared by aqueous spray pyrolysis, while passivating diketones are deposited in vacuum on the ZnO surface. XPS and AFM measurements confirm the successful deposition of passivating molecules at the zinc oxide surface. Electrical characterization of passivated zinc oxide transistors is carried out for different exposure times. All diketones improve transistor stability for positive and negative bias stress. The passivated transistors show improved electrical properties with increased electron mobility and decreased disorder parameter. Finally, threshold voltages shift systematically to negative values and hysteresis clearly reduces. The experimentally determined electrical properties of passivated zinc oxide transistors show a systematic correlation to the effective electron density at the oxygen anchor atoms of diketones and higher charge results in a better performance.



中文翻译:

量身定制的β-二酮可作为溶液处理的氧化锌薄膜晶体管的有效表面钝化剂

研究了固溶氧化锌薄膜晶体管表面缺陷态的二酮钝化。由于三氟乙酰基苯乙酮在苯环上的化学易变性,因此被用作钝化分子的基础。可以在苯环上引入吸电子或给电子取代基以改变钝化分子在酮锚定位置的电子密度。电子密度的相对变化通过不同取代基的DFT计算来量化。实验性地,通过水喷雾热解制备氧化锌薄膜,同时将钝化的二酮真空沉积在ZnO表面。XPS和AFM测量证实了钝化分子在氧化锌表面的成功沉积。钝化氧化锌晶体管的电特性针对不同的曝光时间进行。所有的二酮都改善了晶体管在正负偏置应力下的稳定性。钝化的晶体管显示出改善的电性能,具有增加的电子迁移率和降低的无序参数。最后,阈值电压会系统地移至负值,并且磁滞明显减小。实验确定的钝化氧化锌晶体管的电性能显示出与二酮的氧锚原子处的有效电子密度的系统相关性,较高的电荷会产生更好的性能。钝化的晶体管显示出改善的电性能,具有增加的电子迁移率和降低的无序参数。最后,阈值电压系统地移至负值,并且磁滞明显减小。实验确定的钝化氧化锌晶体管的电性能显示出与二酮的氧锚原子处的有效电子密度的系统相关性,较高的电荷会产生更好的性能。钝化的晶体管显示出改善的电性能,具有增加的电子迁移率和降低的无序参数。最后,阈值电压会系统地移至负值,并且磁滞明显减小。实验确定的钝化氧化锌晶体管的电性能显示出与二酮的氧锚原子处的有效电子密度的系统相关性,较高的电荷会产生更好的性能。

更新日期:2020-08-19
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