Chemical mechanical polishing (CMP) is a common method for planarization/polishing materials during integrated circuits (IC) fabrication. Pad conditioning is a critical component of a CMP process. Herein, the impact of surface textures created by different types of pad conditioners (PC) such as coarse, mid-coarse, and fine PC on the solid pads are studied. Additional surface texture parameters such as surface height distribution, skewness, Dale Void Volume are used to determine an optimum surface texture that gives desired CMP performance such as material removal rate and within-wafer non-uniformity. It was determined that an optimum surface texture on a solid CMP pad can be obtained with a mid-coarse disk. It is further demonstrated that by the addition of porosity to the pads, it is possible to recreate an optimum surface texture and desired CMP performance, similar to that obtained with a mid-coarse disk and a solid pad. Tribological mechanisms of the different pad and PC com...

中文翻译：

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不同抛光垫调理剂对抛光垫表面纹理的影响研究

化学机械抛光（CMP）是在集成电路（IC）制造过程中用于平面化/抛光材料的常用方法。焊盘调节是CMP工艺的关键组成部分。在本文中，研究了由不同类型的垫调节剂（PC）（例如粗糙，中粗和细PC）产生的表面纹理对固体垫的影响。其他表面纹理参数（例如表面高度分布，偏斜度，Dale空隙体积）用于确定最佳的表面纹理，该表面纹理可提供所需的CMP性能，例如材料去除率和晶圆内不均匀性。已确定可以使用中粗盘在固态CMP垫上获得最佳表面纹理。进一步证明，通过在垫板上增加孔隙率，可以重现最佳的表面纹理和所需的CMP性能，类似于使用中粗盘和实心垫获得的性能。不同垫和PC组合的摩擦学机理