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Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
Applied Physics Express ( IF 2.3 ) Pub Date : 2020-08-02 , DOI: 10.35848/1882-0786/aba7a5
Daiki Ishi 1 , Yuichiro Ezoe 1 , Kumi Ishikawa 2 , Masaki Numazawa 1 , Aoto Fukushima 1 , Ryota Otsubo 1 , Hikaru Suzuki 1 , Tatsuya Yuasa 1 , Sae Sakuda 1 , Tomoki Uchino 1 , Maiko Fujitani 1 , Kazuhisa Mitsuda 2 , Mark J. Sowa 3
Affiliation  

We report the enhancement of Pt-coated silicon micropore X-ray optics using plasma atomic layer deposition (ALD). High-aspect-ratio micropores of width20 μ m and depth300 μ m were coated with ∼20 nm Pt and ∼10 nm Al 2 O 3 . The estimated surface roughnesses, determined from X-ray reflectivity curves for Al K α 1.49 keV radiation, were ##IMG## [http://ej.iop.org/images/1882-0786/13/8/087001/apexaba7a5ieqn1.gif] {${1.2}_{-1.0}^{+0.6}$} and 1.6 ± 0.1 nm rms before and after the plasma ALD, respectively. The plasma ALD-coated Pt film shows no significant change compared to the underlying silicon and better surface roughness than our previous study of thermal ALD. We also discuss future improvements with plasma ALD.

中文翻译:

通过等离子体原子层沉积制备的涂有Pt的硅微孔光学器件具有增强的X射线反射率

我们报告了使用等离子体原子层沉积(ALD)的Pt涂层硅微孔X射线光学器件的增强。用约20 nm Pt和约10 nm Al 2 O 3涂覆宽度为20μm,深度为300μm的高纵横比微孔。根据Al Kα1.49 keV辐射的X射线反射率曲线确定的估计表面粗糙度为## IMG ## [http://ej.iop.org/images/1882-0786/13/8/087001/apexaba7a5ieqn1 [gif] {$ {1.2} _ {-1.0} ^ {+ 0.6} $}和等离子体ALD之前和之后的1.6±0.1 nm rms。与下面的硅相比,等离子ALD涂层的Pt膜没有显着变化,并且表面粗糙度比我们以前的热ALD研究更好。我们还将讨论等离子体ALD的未来改进。
更新日期:2020-08-03
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