Interface control of the filament types and the resistive switching behavior of apple pectin (AP) memory devices were systematically investigated using different sputtering plasmas. Supported by the temperature dependence of resistance and line-scan profiles, it can be observed that the sharp interface between the direct current (DC) Al and AP layer of the DC Al/AP/ITO structure showed semiconducting behavior. In the case of the radio frequency (RF) Al/AP/ITO structure, the transition from the metallic to semiconducting behavior occurred at 333 K. The transformation of filament types was a direct consequence of Al diffusion from the RF Al electrode. The diffused Al atoms from the RF Al electrode contributed to the creation of metallic filamentary channels. Moreover, the metal Al effectively diffused through RF sputtering, leading to the formation of an interfacial oxide layer between the Al electrode and the AP thin film. The role of the interfacial layer in enabling stable resistive switching and high device performance in the Al/AP/ITO resistive memory device was revealed. The AP memory device demonstrated a promising ON/OFF ratio of over 10⁷ with uniform electrical distribution and stable retention. Understanding the underlying switching mechanisms of AP memory devices may pave the way toward smart bioelectronics.

中文翻译：

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通过控制Al / Apple果胶界面实现生物记忆设备中的金属和碳丝

苹果果胶（AP）存储设备的细丝类型和电阻切换行为的界面控制已使用不同的溅射等离子体进行了系统研究。在电阻和线扫描曲线的温度依赖性的支持下，可以观察到直流Al / AP / ITO结构的直流（DC）Al和AP层之间的尖锐界面显示出半导体行为。在射频（RF）Al / AP / ITO结构的情况下，从金属行为到半导体行为的转变发生在333K。灯丝类型的转变是Al从RF Al电极扩散的直接结果。来自射频铝电极的扩散铝原子有助于形成金属丝状通道。而且，金属铝通过射频溅射有效扩散，导致在Al电极和AP薄膜之间形成界面氧化物层。揭示了界面层在Al / AP / ITO电阻存储器件中实现稳定的电阻切换和实现高器件性能中的作用。AP存储设备的开/关比有望超过10⁷，分布均匀，保持力稳定。了解AP存储设备的基本开关机制可能为智能生物电子学铺平道路。