Room-Temperature Colossal Magnetoresistance in Terraced Single-Layer Graphene.,Advanced Materials

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Room-Temperature Colossal Magnetoresistance in Terraced Single-Layer Graphene.
Advanced Materials ( IF 27.4 ) Pub Date : 2020-08-02 , DOI: 10.1002/adma.202002201
Junxiong Hu _{1,

2,

3} , Jian Gou ₂ , Ming Yang ₄ , Ganesh Ji Omar _{1,

2} , Junyou Tan ₃ , Shengwei Zeng _{1,

2} , Yanpeng Liu ₅ , Kun Han _{1,

2} , Zhishiuh Lim _{1,

2} , Zhen Huang _{1,

2} , Andrew Thye Shen Wee _{2,

3} , Ariando Ariando _{1,

2,

3}

Affiliation

Disorder‐induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in 2D materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor based on this effect because of the difficulty in controlling the spatial distribution of disorder and enhancing the MR sensitivity in the single‐layer regime. Here, a room‐temperature colossal MR of up to 5000% at 9 T is reported in terraced single‐layer graphene. By laminating single‐layer graphene on a terraced substrate, such as TiO₂‐terminated SrTiO₃, a universal one order of magnitude enhancement in the MR compared to conventional single‐layer graphene devices is demonstrated. Strikingly, a colossal MR of >1000% is also achieved in the terraced graphene even at a high carrier density of ≈10¹² cm⁻². Systematic studies of the MR of single‐layer graphene on various oxide‐ and non‐oxide‐based terraced surfaces demonstrate that the terraced structure is the dominant factor driving the MR enhancement. The results open a new route for tailoring the physical property of 2D materials by engineering the strain through a terraced substrate.

中文翻译：

梯形单层石墨烯的室温巨大磁阻。

无序感应磁阻（MR）效应在低垂直磁场下为二次方，在高磁场下为线性。这种效果在技术上很有吸引力，尤其是在2D材料（例如石墨烯）中，因为它在具有纳米级空间分辨率的磁传感器中提供了潜在的应用。但是，由于难以控制无序的空间分布并难以提高单层机制的MR灵敏度，因此基于这种效应实现石墨烯磁性传感器是一个巨大的挑战。在此，据报道梯形单层石墨烯在9 T时的室温总MR高达5000％。通过将单层石墨烯层压在露台基材上，例如以TiO _2为末端的SrTiO ₃与传统的单层石墨烯器件相比，MR普遍提高了一个数量级。引人注目的是，的> 1000％一个巨大MR也是在梯田石墨烯即使在≈10高载流子密度达到¹²厘米^-2。对各种基于氧化物和基于非氧化物的平台表面上单层石墨烯的MR的系统研究表明，平台结构是驱动MR增强的主要因素。该结果为通过在梯形衬底上加工应变来为2D材料的物理特性定制提供了一条新途径。

更新日期：2020-09-15

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