The ability to switch magnetic elements by spin‐orbit‐induced torques has recently attracted much attention for a path toward high‐performance, nonvolatile memories with low power consumption. Realizing efficient spin‐orbit‐based switching requires the harnessing of both new materials and novel physics to obtain high charge‐to‐spin conversion efficiencies, thus making the choice of spin source crucial. Here, the observation of spin‐orbit torque switching in bilayers consisting of a semimetallic film of 1T′‐MoTe₂ adjacent to permalloy is reported. Deterministic switching is achieved without external magnetic fields at room temperature, and the switching occurs with currents one order of magnitude smaller than those typical in devices using the best‐performing heavy metals. The thickness‐dependence can be understood if the interfacial spin‐orbit contribution is considered in addition to the bulk spin Hall effect. Further threefold reduction in the switching current is demonstrated with resort to dumbbell‐shaped magnetic elements. These findings foretell exciting prospects of using MoTe₂ for low‐power semimetal‐material‐based spin devices.

中文翻译：

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MoTe2 /坡莫合金异质结构中的自旋轨道转矩磁化转换。

通过自旋轨道感应的扭矩切换磁性元件的能力最近引起了人们的关注，这是一条通往低功耗的高性能，非易失性存储器的道路。要实现基于自旋轨道的有效切换，需要利用新材料和新颖的物理学手段来获得高的电荷到自旋转换效率，因此自旋源的选择至关重要。在这里，观察了由1T'-MoTe ₂半金属膜组成的双层自旋轨道转矩转换据报道与坡莫合金相邻。在室温下无需外部磁场即可实现确定性切换，并且切换时的电流比使用性能最佳的重金属的设备中的电流小一个数量级。如果除了整体自旋霍尔效应之外还考虑了界面自旋轨道的贡献，则可以理解厚度依赖性。借助于哑铃形磁性元件，证明了开关电流进一步降低了三倍。这些发现预示了将MoTe ₂用于低功率半金属材料自旋器件的令人兴奋的前景。