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The choice of Zn or ZnS layer in the stacked precursors for preparation of Cu2ZnSnS4 (CZTS) thin films
Micro and Nanostructures ( IF 2.7 ) Pub Date : 2020-10-01 , DOI: 10.1016/j.spmi.2020.106669
M.A. Olgar , A. Seyhan , A.O. Sarp , R. Zan

Abstract Cu2ZnSnS4 (CZTS) thin films are commonly used as an absorber layer in the thin film solar cell structure. In this study, CZTS thin films were produced by sulfurization of stacked precursor films that is prepared by deposition of Cu, Zn, SnS, ZnS films on glass substrate using sputtering method. The sequential sputter deposition was performed to obtain two distinct stacked precursors, Cu/SnS/Zn/Cu and Cu/SnS/ZnS/Cu respectively. Afterwards, annealing process was implemented at various reaction temperatures (500–575 °C) for 1 min utilizing rapid thermal processing (RTP). The EDX measurements revealed that all the prepared CZTS samples had Cu-poor and Zn-rich composition that are non-stoichiometric chemical composition. This non-stoichiometric composition is important for high efficient CZTS based solar cells. XRD measurements revealed that all patterns are dominated by diffraction planes of kesterite CZTS. The CuS, Cu2S and SnS2 secondary phases also were detected in the XRD pattern of some CZTS films. Raman spectroscopy measurements verified formation of kesterite CZTS phase for all films and picked out CTS phase for some samples prepared using Cu/SnS/Zn/Cu precursor films. The surface microstructure of the films that were obtained through SEM displayed polycrystalline surface structure. Room temperature PL emission spectra of the films showed broad peak at around 1.37–1.38 eV, which is near to the optical band gap of kesterite CZTS structure. Electrical characterization of the samples demonstrated that B-525 CZTS thin film has more suitable electrical resistivity and carrier concentration values for CZTS based solar cell applications.

中文翻译:

用于制备 Cu2ZnSnS4 (CZTS) 薄膜的堆叠前驱体中 Zn 或 ZnS 层的选择

摘要 Cu2ZnSnS4(CZTS)薄膜是薄膜太阳能电池结构中常用的吸收层。在这项研究中,CZTS 薄膜是通过使用溅射方法在玻璃基板上沉积 Cu、Zn、SnS、ZnS 薄膜制备的堆叠前驱体薄膜硫化来制备的。执行顺序溅射沉积以获得两种不同的堆叠前驱体,分别为 Cu/SnS/Zn/Cu 和 Cu/SnS/ZnS/Cu。之后,利用快速热处理 (RTP) 在各种反应温度 (500–575 °C) 下实施退火过程 1 分钟。EDX 测量表明,所有制备的 CZTS 样品都具有非化学计量化学成分的贫铜和富锌成分。这种非化学计量组成对于高效的基于 CZTS 的太阳能电池很重要。XRD 测量表明所有图案都由黄铜矿 CZTS 的衍射面主导。在一些 CZTS 薄膜的 XRD 图中也检测到 CuS、Cu2S 和 SnS2 次生相。拉曼光谱测量验证了所有薄膜的黄铜矿 CZTS 相的形成,并为使用 Cu/SnS/Zn/Cu 前体薄膜制备的一些样品挑选了 CTS 相。通过 SEM 获得的薄膜的表面微观结构显示出多晶表面结构。薄膜的室温 PL 发射光谱在 1.37-1.38 eV 附近显示出宽峰,接近黄铜矿 CZTS 结构的光学带隙。样品的电气特性表明 B-525 CZTS 薄膜具有更适合基于 CZTS 的太阳能电池应用的电阻率和载流子浓度值。
更新日期:2020-10-01
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