Abstract Silicon solar cells are now less than 3% absolute from the theoretical efficiency limit. Advanced passivated contact architectures have demonstrated surface saturation current densities close to 1 fA/cm2. We have optimized the thin intrinsic hydrogenated amorphous silicon layer by controlling the deposition temperature and the silane-to-hydrogen dilution ratio. Thin wafers were used as a testbed to increase the sensitivity to surface passivation. By optimizing the intrinsic layer, we reduced the surface saturation current densities from 1.7 fA/cm2 to 0.6 fA/cm2 on textured wafers with thicknesses ranging between 40 and 180 μm. Implied open-circuit voltages over 760 mV were accomplished on p-i/c-Si/i-n structures deposited on n-type CZ wafers with wafer thicknesses below 50 μm. Further, we demonstrated experimentally the potential of using very thin wafers by manufacturing screen-printed silicon heterojunction solar cells on 40 μm thick standalone wafers while achieving an efficiency of 20.48%.

中文翻译：

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改善用于高效硅异质结太阳能电池的非常薄基板上的表面钝化

摘要 硅太阳能电池现在离理论效率极限的绝对值不到 3%。先进的钝化接触架构已证明表面饱和电流密度接近 1 fA/cm2。我们通过控制沉积温度和硅烷与氢的稀释比优化了薄的本征氢化非晶硅层。薄晶片被用作测试台以增加对表面钝化的敏感性。通过优化本征层，我们将厚度在 40 到 180 μm 之间的纹理晶片上的表面饱和电流密度从 1.7 fA/cm2 降低到 0.6 fA/cm2。超过 760 mV 的隐含开路电压是在 pi/c-Si/in 结构上实现的，该结构沉积在晶片厚度低于 50 μm 的 n 型 CZ 晶片上。更多，