This paper investigates the effect of scribing speed on the surface morphology and material removal behavior in diamond wire sawing of monocrystalline silicon through specially designed high-speed diamond scribing experiments. High-speed scribing tests are performed on a (100) monocrystalline silicon wafer over a wide range of speeds. The results show that a higher scribing speed is prone to inducing more surface defects such as burrs and tearing in the ductile scribing region, and more radial cracks in the brittle scribing region. The critical scribing depth of ductile-to-brittle transition is found to decrease with increasing scribing speed. A strain rate hardening effect is evident in the experimental data, which explains the underlying mechanism for promotion of brittle fracture at higher scribing speeds.

本文通过专门设计的高速金刚石划线实验研究了划线速度对单晶硅金刚石线锯中表面形态和材料去除行为的影响。在（100）单晶硅晶片上以广泛的速度进行高速划线测试。结果表明，较高的划刻速度易于在延展性划刻区域中引起更多的表面缺陷，例如毛刺和撕裂，以及在脆性划刻区域中产生更多的径向裂纹。发现韧性到脆性转变的临界划线深度随着划线速度的增加而减小。在实验数据中明显显示出应变速率硬化效应，这解释了在较高划线速度下促进脆性断裂的潜在机理。