Abstract We investigate the effects of point defects on the Interface Thermal Resistance (ITR) of graphene/hexagonal boron nitride (G/h-BN) heterointerface with various stacking forms by ultrafast thermal pulse method. The results reveal that the ITR of different stacking forms presents a significant downward trend with the existence of point defects. This counterintuitive behavior is attributed to the defects increase the vibration intensity of out-of-plane phonons of graphene in low-frequency region, thus enhancing the phonons coupling between graphene and h-BN layer. ITR of G/h-BN is further reduced by 50% with the defect rate increases from 0% to 5% and that is reduced by 65% with the temperature rises from 200 K to 700 K. Besides, it is found that the defective G/h-BN has thermal rectification characteristic and that is positively related to temperature and defect rate. Our study provides a practical way for the application of defects in graphene and a new approach for the design of thermal rectifier devices.

中文翻译：

---

缺陷对石墨烯/六方氮化硼异质界面热传导的影响

摘要 我们通过超快热脉冲法研究了点缺陷对具有各种堆叠形式的石墨烯/六方氮化硼 (G/h-BN) 异质界面的界面热阻 (ITR) 的影响。结果表明，随着点缺陷的存在，不同堆叠形式的ITR呈现显着下降趋势。这种违反直觉的行为归因于缺陷增加了低频区域石墨烯面外声子的振动强度，从​​而增强了石墨烯和 h-BN 层之间的声子耦合。G/h-BN 的 ITR 进一步降低 50%，缺陷率从 0% 提高到 5%，随着温度从 200 K 升高到 700 K，ITR 降低 65%。此外，发现有缺陷的 G/h-BN 具有热整流特性，并且与温度和缺陷率呈正相关。我们的研究为石墨烯中缺陷的应用提供了一种实用的方法，并为热整流器件的设计提供了一种新方法。