The SRAM cells suffer from soft errors under high radiation environment like aerospace and satellite applications. Few radiations hardened based popular cells are 12T Dice and 12T We-Quatro. But these cells required more area and power consumption. To address these problems a 10T SRAM cell is designed, which gives perfect balance among all the parameters with higher delay. Hence, it is the most suggestible cell under high radiation environment. However, the 10T SRAM cell for high frequency under process variations gives a large number of write failure, which impeding the application of 10T SRAM cell. In this paper, a new SRAM cell has been proposed, which provides less power, more stability, less area, and very high soft error resilience. The proposed cell provides 17.48%, 5.26% less static power loss compared to We-Quatro and Dice, respectively. The total power loss of the proposed cell is reduced by 39.26%, 9.56% compared to We-Quatro and Dice cell respectively. The hold stability is increased by 45%, 81.59% compared to We-Quatro and Dice cell respectively. Also, the proposed cell gives moderate area overhead, comparable write speed, and perfect balance among all the parameters. The proposed cell is also verified using Monte Carlo (M.C) simulation in 45 nm CMOS technology.

SRAM单元在航天和卫星应用等高辐射环境下会遭受软错误。硬化后的流行细胞很少有12T Dice和12T We-Quatro。但是这些电池需要更多的面积和功耗。为了解决这些问题，设计了一个10T SRAM单元，该单元在所有参数之间实现了完美的平衡，并具有更高的延迟。因此，它是高辐射环境下最容易被发现的细胞。然而，在工艺变化下用于高频的10T SRAM单元会产生大量的写入失败，这阻碍了10T SRAM单元的应用。在本文中，已经提出了一种新的SRAM单元，该单元具有更低的功耗，更高的稳定性，更少的面积以及非常高的软错误恢复能力。与We-Quatro和Dice相比，拟议的电池分别减少了17.48％，5.26％的静态功耗。与We-Quatro和Dice电池相比，该电池的总功耗分别降低了39.26％和9.56％。与We-Quatro和Dice电池相比，保持稳定性分别提高了45％，81.59％。而且，所提出的单元提供了适中的区域开销，可比的写入速度以及所有参数之间的完美平衡。还使用45 nm CMOS技术中的蒙特卡罗（MC）仿真来验证提出的单元。