Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf_1-xZr_xO₂ (HZO) thin film to form negative capacitance (NC) gate dielectrics, which generates a counterclock hysteresis loop of polarization domain in the few-layered molybdenum disulfide (MoS₂) FeFET. The unstabilized negative capacitor inherently supports subthermionic swing rate and thus enables switching the ferroelectric polarization with the hysteresis window much less than half of the operating voltage. The FeFET shows a high on/off current ratio of more than 10⁷ and a counterclockwise memory window (MW) of 0.1 V at a miminum program (P)/erase (E) voltage of 3 V. Robust endurance (10³ cycles) and retention (10⁴ s) properties are also demonstrated. Our results demonstrate that the HZO/MoS₂ ferroelectric memory transistor can achieve new opportunities in size- and voltage-scalable non-volatile memory applications.

铁电场效应晶体管（FeFET）由于其有希望的工作速度和耐用性而成为一种有趣的非易失性存储技术。但是，与读取相比，翻转极化需要较高的电压，这会影响写入单元的功耗。在这里，我们报道了一种具有低工作电压的CMOS兼容FeFET单元。我们对铁电Hf _1-x Zr _x O ₂（HZO）薄膜进行工程设计，以形成负电容（NC）栅极电介质，从而在几层二硫化钼（MoS ₂）中产生极化域的逆时针磁滞回线。FeFET。不稳定的负电容器固有地支持亚热离子摆动速率，因此能够以远小于工作电压一半的磁滞窗口来切换铁电极化。FeFET在3 V的最小编程（P）/擦除（E）电压下显示出高开/关电流比，大于10 ⁷，逆时针存储窗口（MW）为0.1V。强大的耐用性（10 ³ 个周期） 还显示了保留时间（10 ⁴ s）。我们的结果表明，HZO / MoS ₂铁电存储晶体管可以在尺寸和电压可缩放的非易失性存储应用中获得新的机遇。