Substrate surfaces terminated with a specific surface reconstruction are a prerequisite for the controlled epitaxial growth of most materials. Focusing on SrTiO3 (001) substrates, it has recently been shown that in situ substrate termination by thermal annealing has decisive advantages over standard termination methods. We report here that in situ substrate termination is a generally applicable method not restricted to SrTiO3 crystals. We specifically demonstrate the successful surface preparation of doped SrTiO3 (001), LaAlO3 (001), NdGaO3 (001), DyScO3 (110), TbScO3 (110), MgO (001), and Al2O3 (0001) surfaces.

中文翻译：

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氧化物表面的原位热制备

以特定表面重建终止的衬底表面是大多数材料受控外延生长的先决条件。关注 SrTiO3 (001) 衬底，最近表明，通过热退火进行的原位衬底终止比标准终止方法具有决定性的优势。我们在此报告，原位衬底终止是一种普遍适用的方法，不限于 SrTiO3 晶体。我们特别展示了掺杂 SrTiO3 (001)、LaAlO3 (001)、NdGaO3 (001)、DyScO3 (110)、TbScO3 (110)、MgO (001) 和 Al2O3 (0001) 表面的成功表面制备。