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Interfacing topological insulators and ferrimagnets: Bi2Te3 and Fe3O4 heterostructures grown by molecular beam epitaxy
APL Materials ( IF 5.3 ) Pub Date : 2020-07-01 , DOI: 10.1063/5.0010339
V. M. Pereira, C. N. Wu, C.-A. Knight, A. Choa, L. H. Tjeng, S. G. Altendorf

Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here we investigate heterostructures of Bi$_2$Te$_3$ and Fe$_3$O$_4$. By growing two different types of heterostructures by molecular beam epitaxy, Fe$_3$O$_4$ on Bi$_2$Te$_3$ and Bi$_2$Te$_3$ on Fe$_3$O$_4$, we explore differences in chemical stability, crystalline quality, electronic structure, and transport properties. We find the heterostructure Bi$_2$Te$_3$ on Fe$_3$O$_4$ to be a more viable approach, with transport signatures in agreement with a gap opening in the topological surface states.

中文翻译:

连接拓扑绝缘体和亚铁磁体:通过分子束外延生长的 Bi2Te3 和 Fe3O4 异质结构

依靠拓扑绝缘体和磁绝缘体的异质结构中的邻近效应引起的磁性是实现量子反常霍尔效应的有前途的途径之一。在这里,我们研究了 Bi$_2$Te$_3$ 和 Fe$_3$O$_4$ 的异质结构。通过分子束外延生长两种不同类型的异质结构,Bi$_2$Te$_3$ 上的 Fe$_3$O$_4$ 和 Fe$_3$O$_4$ 上的 Bi$_2$Te$_3$,我们探索化学稳定性、结晶质量、电子结构和传输特性的差异。我们发现 Fe$_3$O$_4$ 上的异质结构 Bi$_2$Te$_3$ 是一种更可行的方法,其传输特征与拓扑表面状态中的间隙开放一致。
更新日期:2020-07-01
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