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Control of electron and ion density profiles via virtual ground position control in an inductively coupled plasma
Physics of Plasmas ( IF 2.0 ) Pub Date : 2020-07-01 , DOI: 10.1063/5.0010018
Tae-Woo Kim 1 , Ju-ho Kim 1 , Moo-Young Lee 2 , Chin-Wook Chung 1
Affiliation  

The effects of capacitive coupling on electron and ion density profiles are studied in an argon inductively coupled plasma. Electron energy probability functions and two-dimensional ion density profiles were measured by changing the termination capacitance from 200 to 1000 pF. Experimental results show that a termination capacitor creates a virtual ground on a coil, and the virtual ground suppresses the local capacitive coupling. At 2 mTorr (non-local electron kinetics), there is little change in the azimuthal electron density distribution for different termination capacitances. However, at 50 mTorr (local electron kinetics), the virtual ground causes each mode (E-mode and H-mode) to have the maximum and minimum points in the azimuthal electron density distribution. As the termination capacitance increases, the virtual ground moves along the coil and the maximum and minimum points of the electron density also move with the virtual ground. These effects are explained by electron dynamics and the power transfer mechanism in each mode (E-mode and H-mode).

中文翻译:

通过电感耦合等离子体中的虚拟接地位置控制来控制电子和离子密度分布

在氩电感耦合等离子体中研究了电容耦合对电子和离子密度分布的影响。通过将终端电容从 200 更改为 1000 pF 来测量电子能量概率函数和二维离子密度分布。实验结果表明,端接电容在线圈上形成虚地,虚地抑制了局部电容耦合。在 2 mTorr(非局部电子动力学)下,不同终端电容的方位电子密度分布几乎没有变化。然而,在 50 mTorr(局部电子动力学)下,虚拟地面会导致每个模式(E 模式和 H 模式)在方位角电子密度分布中具有最大值和最小值点。随着终端电容的增加,虚地沿线圈移动,电子密度的最大值和最小值点也随虚地移动。这些效应可以通过电子动力学和每种模式(E 模式和 H 模式)中的功率传输机制来解释。
更新日期:2020-07-01
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