The volume-averaged global plasma model has been widely used to analyze the characteristics of plasma, although the spatial variation of plasma parameters cannot be obtained from it. It has also been used to obtain temporal plasma parameters for pulsed plasma sources. In this work, we analyzed the effect of an edge-to-center density ratio (h factor) and an electron heating model on the plasma parameters in pulsed plasma simulations using the global model for Ar discharges. In most previous pulse simulations using the global model, the h factor has been applied to pulse conditions in the same way it has been applied to radio frequency, and the power absorbed by the electrons was assumed to be equal to the applied power. However, in this work, we considered a time-varying h factor and determined the absorbed power using an analytical electron heating model, solving the spatially averaged transport equations in a self-consistent manner. We found that a decreased h factor increases the plasma density and consequently changes the time dependence of the electron temperature. In addition, the overshoot of the electron temperature is limited at the beginning of the pulse power-on in the self-consistent electron heating model. Our results are of great relevance with respect to the analysis of plasma parameters.

中文翻译：

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脉冲电感耦合等离子体源的全局模型：边缘与中心密度比和电子加热的影响

体积平均全局等离子体模型已被广泛用于分析等离子体的特性，尽管无法从中获得等离子体参数的空间变化。它也被用于获得脉冲等离子体源的时间等离子体参数。在这项工作中，我们使用 Ar 放电的全局模型分析了边缘与中心密度比（h 因子）和电子加热模型对脉冲等离子体模拟中等离子体参数的影响。在以前使用全局模型进行的大多数脉冲模拟中，h 因子以与应用于射频相同的方式应用于脉冲条件，并且假设电子吸收的功率等于施加的功率。然而，在这项工作中，我们考虑了随时间变化的 h 因子，并使用分析电子加热模型确定了吸收功率，以自洽的方式求解空间平均传输方程。我们发现减小的 h 因子会增加等离子体密度，从而改变电子温度的时间依赖性。此外，在自洽电子加热模型中，在脉冲通电开始时，电子温度的过冲受到限制。我们的结果与等离子体参数的分析非常相关。在自洽电子加热模型中，在脉冲通电开始时，电子温度的过冲受到限制。我们的结果与等离子体参数的分析非常相关。在自洽电子加热模型中，在脉冲通电开始时，电子温度的过冲受到限制。我们的结果与等离子体参数的分析非常相关。