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Structure optimization of the silicon detector: A novel three-dimensional trench detector
Aip Advances ( IF 1.4 ) Pub Date : 2020-07-27 , DOI: 10.1063/5.0015465
Tao Zhou 1, 2 , Manwen Liu 1, 2, 3 , Shunmao Lu 1, 2 , Zheng Li 1, 2, 3, 4
Affiliation  

In this study, a novel three-dimensional trench detector structure was proposed. The detector structure includes trench electrodes and columnar electrodes. The columnar electrodes are distributed in the middle, the middle of the sides, and the four corners of the cross section of the substrate. A cross-shaped electrode is etched from top to bottom, and a polygonal trench electrode is etched from bottom to top; the bottom of the cross-shaped electrode abuts the top of the polygonal electrode. Electrical characteristics of the novel detector are simulated by Technology Computer Aided Design simulation, and we can obtain that this design reduces the area of the bottom low electric field, optimizes the electric field, and reduces the mutual interference between the cells.

中文翻译:

硅探测器的结构优化:新型三维沟槽探测器

在这项研究中,提出了一种新颖的三维沟槽检测器结构。检测器结构包括沟槽电极和柱状电极。柱状电极分布在基板横截面的中间,侧面的中间和四个角。从顶部到底部蚀刻十字形电极,从底部到顶部蚀刻多边形沟槽电极。十字形电极的底部紧靠多边形电极的顶部。通过技术计算机辅助设计仿真对新型探测器的电特性进行了仿真,可以得出该设计减小了底部低电场的面积,优化了电场,并减少了电池之间的相互干扰。
更新日期:2020-08-01
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