Obtaining short-wavelength-infrared (SWIR; 1.4 μm–3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection. By ion-implanting Se or Te into Ge wafers and restoring crystallinity with pulsed laser melting induced rapid solidification, we obtain single crystalline materials with peak Se and Te concentrations of 10²⁰ cm⁻³ (10⁴ times the solubility limits). These hyperdoped materials exhibit sub-bandgap absorption of light up to wavelengths of at least 3.0 μm, with their sub-bandgap optical absorption coefficients comparable to those of commercial SWIR photodetection materials. Although previous studies of Ge-based photodetectors have reported a sub-bandgap optoelectronic response only at low temperature, we report room-temperature sub-bandgap SWIR photodetection at wavelengths as long as 3.0 μm from rudimentary hyperdoped Ge:Se and Ge:Te photodetectors.

中文翻译：

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硫属元素超掺杂锗用于短波红外光检测

获得短波红外（SWIR; 1.4 μ M-3.0 μ M）的室温光检测在一个低成本，IV族半导体是期望的许多应用。我们展示了一种非平衡方法，用硒或碲对锗进行超掺杂，以进行掺杂剂介导的SWIR光检测。通过将Se或Te离子注入Ge晶片中，并通过脉冲激光熔化诱导的快速凝固来恢复结晶度，我们获得了Se和Te的峰值浓度为10 ²⁰ cm ^-3（10 ⁴溶解度极限）的单晶材料。这些hyperdoped材料表现出的光向上亚带隙吸收，至少为3.0的波长μm，其子带隙光学吸收系数可与商业SWIR光检测材料相媲美。虽然基于锗的光电探测器以前的研究报告只有在低温下的子带隙光电响应，我们在波长报道室温次带隙SWIR光电探测只要3.0 μ从简陋米hyperdoped戈：硒和锗：特光电探测器。