The fabrication of solution-processed electronic devices based on amorphous In–Ga–Zn–O (a-IGZO) requires high-temperature post-deposition annealing to activate IGZO layers and minimize impurities. Deep-ultraviolet (DUV) treatment can reduce the post-deposition annealing temperature when manufacturing a-IGZO thin-film transistors. Here, we investigate the effect of thermal annealing and DUV treatment in a nitrogen and ozone atmosphere on the properties of vertical thin-film Pt–IGZO–Cu Schottky diodes based on spin-coated a-IGZO. The DUV treatment in nitrogen allowed reducing the process temperature to 200 °C. A defect-induced hysteresis was observed on the current–voltage characteristics of as-fabricated Schottky diodes. The values of rectification ratio and barrier height were higher and the values of ideality factor were lower upon the backward bias sweep. It is assumed that the hysteresis behavior is caused by the presence of trap states in the semiconductor layer or at the Schottky interface. A trap density of 10⁸ cm⁻² to 10¹¹ cm⁻² was deduced from the current–voltage characteristics. The defect-induced hysteresis effect could be suppressed by depositing an Al₂O₃ layer and applying an additional thermal treatment of the whole diode structure.

中文翻译：

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沉积后处理对固溶a-IGZO肖特基二极管电性能的影响

基于非晶态In-Ga-Zn-O（a-IGZO）的固溶处理电子器件的制造需要高温后沉积退火，以激活IGZO层并使杂质最少。在制造a-IGZO薄膜晶体管时，深紫外线（DUV）处理可以降低沉积后的退火温度。在这里，我们研究了在氮和臭氧气氛中进行热退火和DUV处理对基于旋涂a-IGZO的垂直薄膜Pt–IGZO–Cu肖特基二极管的性能的影响。在氮气中进行DUV处理可以将工艺温度降低到200°C。在制造的肖特基二极管的电流-电压特性上观察到了由缺陷引起的磁滞现象。反向偏置扫描时，整流比和势垒高度的值较高，而理想因子的值较低。假定磁滞行为是由半导体层或肖特基界面处的陷阱态引起的。陷阱密度为10从电流-电压特性推导出⁸ cm ^-2至10 ¹¹ cm ^-2。可以通过沉积Al ₂ O ₃层并对整个二极管结构进行额外的热处理来抑制由缺陷引起的磁滞效应。