Abstract This research work investigates the effects of He–Ne laser (115 and 287 J/cm2 fluence) radiation on the etching parameters like bulk etch rate VB, track etch rate VT, Sensitivity S, critical angle θC and efficiency η of Lexan plastic track detector, irradiated with fission fragments from 252Cf source. The changes in etching parameters due to He–Ne laser in the fluence range of 0, 115, and 287 J/cm2 at different temperatures (328–348 K) have been discussed in detail. Bulk and track etch rates are observed to vary with He–Ne laser fluence both in case of pre-exposed and post-exposed detectors as compared to un-exposed Lexan plastic detector. Both bulk and track etch rates follow Arrhenius equation. Based on these results, important inferences regarding activation energies associated with bulk and track etch rates have been made. Sensitivity, critical angles and efficiencies of detector material also reveal significant facts about the changes in properties due to He–Ne laser on the Lexan plastic detector. A comparative study is performed on the effects of coherent/in-coherent electromagnetic radiation on nuclear track detectors. The activation energies of bulk and tack etching for commonly used nuclear track detectors is also reported.

中文翻译：

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He-Ne激光对裂变碎片辐照lexan（聚碳酸酯）塑料径迹探测器刻蚀参数的影响

摘要 本研究工作研究了 He-Ne 激光（115 和 287 J/cm2 能量密度）辐射对蚀刻参数的影响，如体蚀刻速率 VB、轨道蚀刻速率 VT、灵敏度 S、临界角 θC 和 Lexan 塑料轨道的效率 η探测器，用 252Cf 源的裂变碎片照射。已经详细讨论了在不同温度 (328-348 K) 下注量范围为 0、115 和 287 J/cm2 的 He-Ne 激光引起的蚀刻参数的变化。与未曝光的 Lexan 塑料探测器相比，在预曝光和后曝光探测器的情况下，观察到整体和轨迹蚀刻速率随 He-Ne 激光能量密度而变化。体刻蚀率和轨迹刻蚀率都遵循 Arrhenius 方程。基于这些结果，已经做出了关于与体蚀刻速率和轨道蚀刻速率相关的活化能的重要推论。灵敏度，检测器材料的临界角和效率也揭示了由于 He-Ne 激光在 Lexan 塑料检测器上引起的特性变化的重要事实。对相干/非相干电磁辐射对核径迹探测器的影响进行了比较研究。还报告了常用核径迹探测器的体刻蚀和粘性刻蚀的活化能。