Abstract The realisation of spatially-determined, uniform arrays of faceted aluminium nitride (AlN) nanostructures has had limited exploration, largely due to the fact that selective area growth of AlN via MOVPE (Metal Organic Vapour Phase Epitaxy) has not been realised. Instead, this paper reports the use of a combined top-down, bottom-up approach to realise well-faceted, highly-uniform, periodic nanotextured AlN surfaces. MOVPE regrowth is performed upon dry-etched AlN nanorods and nanoholes, and we present a study into the effect of the growth conditions on the resulting faceting and morphology. Specifically, growth temperature, V/III ratio and growth time are investigated and analysed via scanning-electron and atomic-force microscopy. The V/III ratio was found to influence the nanostructure morphology most whilst the growth temperature was found to have much less of an impact within the temperature range studied. Experiments with a longer growth time are performed to create nanostructures for potential use in applications, such as for AlGaN-based quantum-well or quantum-dot emitters.

中文翻译：

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通过自上而下、自下而上的组合方法创建多面 AlN 纳米结构的规则阵列

摘要 空间确定的、均匀的多面氮化铝 (AlN) 纳米结构阵列的实现有限，主要是由于尚未实现通过 MOVPE（金属有机气相外延）选择性区域生长的 AlN。相反，本文报告了使用自上而下、自下而上的组合方法来实现多面、高度均匀、周期性纳米纹理的 AlN 表面。MOVPE 再生长是在干蚀刻的 AlN 纳米棒和纳米孔上进行的，我们研究了生长条件对所得刻面和形态的影响。具体而言，通过扫描电子和原子力显微镜研究和分析生长温度、V/III 比和生长时间。发现 V/III 比对纳米结构形态的影响最大，而在研究的温度范围内发现生长温度的影响要小得多。进行更长生长时间的实验以创建纳米结构，以用于潜在的应用，例如基于 AlGaN 的量子阱或量子点发射器。