The first stages of the growth of the NiSi phase at the expense of θ-Ni2Si have been studied mainly by in-situ XRD measurements and atom probe tomography (APT) analysis. In-situ XRD isothermal annealing at different temperatures were performed on several samples in order to monitor the phase formation sequence, the time at which NiSi phase begin to form and its growth kinetics. These results show that while the phase formation sequence is the same, the time for the beginning of formation of NiSi varies from one sample to the other under the same isothermal temperature and experimental conditions. Comparing these findings with nucleation and growth models, the growth of the NiSi phase at the expense of θ-Ni2Si is controlled by nucleation compared to diffusion in the case of δ-Ni2Si as the first phase. The kinetics for the nucleation and lateral growth of the NiSi phase were deduced and the implications for the formation of this phase and for contacts are discussed.

中文翻译：

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NiSi 相在外延 θ-Ni2Si/Si 界面的成核和横向生长动力学

主要通过原位 XRD 测量和原子探针断层扫描 (APT) 分析研究了以 θ-Ni2Si 为代价的 NiSi 相生长的第一阶段。在不同温度下对几个样品进行原位 XRD 等温退火，以监测相形成顺序、NiSi 相开始形成的时间及其生长动力学。这些结果表明，虽然相形成顺序相同，但在相同的等温温度和实验条件下，NiSi 开始形成的时间从一个样品到另一个样品不同。将这些发现与成核和生长模型进行比较，在 δ-Ni2Si 作为第一相的情况下，与扩散相比，以 θ-Ni2Si 为代价的 NiSi 相的生长受成核控制。