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Morphology-Sensitive Sulfation Effect on Ceria Catalysts for NH 3 -SCR
Topics in Catalysis ( IF 2.8 ) Pub Date : 2020-07-31 , DOI: 10.1007/s11244-020-01342-8
Wei Tan , Jiaming Wang , Shuohan Yu , Annai Liu , Lulu Li , Kai Guo , Yidan Luo , Shaohua Xie , Fei Gao , Fudong Liu , Lin Dong

In this work, sulfation effect on NH3-SCR performance over CeO2 with different morphology (nanocubes and nanorods) was carefully studied. A morphology-sensitive sulfation effect on NH3-SCR activity was observed on CeO2. Interestingly, the NO removal efficiencies of CeO2 nanocubes and CeO2 nanorods got greatly enhanced after the sulfation at low-temperature range (< 350 °C). CeO2 nanorods exhibited a much higher NH3-SCR activity than that of CeO2 cubes. However, compared to CeO2 nanocubes, CeO2 nanorods suffered from a severe deactivation when sulfated at higher temperatures (> 350 °C). A series of characterizations such as N2 adsorption–desorption, XRD, HR-TEM, TG–DTA, Raman and in situ DRIFTS of SO2 + O2 adsorption were conducted to investigate the interactions between SO2 and nano-shaped CeO2. It was revealed that the morphology of CeO2 nanorods was damaged severely when sulfated at high temperature (> 350 °C), while the structure of CeO2 nanocubes was relatively stable under the same condition. Furthermore, more sulfate species were found on CeO2 nanorods than on CeO2 nanocubes, in particular of bulk like sulfate species. As a result, the NO removal efficiency of CeO2 nanorods declined greatly when sulfated at high temperature.



中文翻译:

形态敏感性硫化对二氧化铈催化剂NH 3 -SCR的影响

在这项工作中,仔细研究了硫酸盐对具有不同形态(纳米立方和纳米棒)的CeO 2上NH 3 -SCR性能的影响。在CeO 2上观察到形态敏感的硫酸盐化作用,对NH 3 -SCR活性有影响。有趣的是,铈的NO去除率2纳米立方体和的CeO 2纳米棒在低温度范围内(<350℃)的硫酸化后得到了大幅度的提高。CeO 2纳米棒表现出比CeO 2立方体高得多的NH 3 -SCR活性。但是,与CeO 2纳米立方体相比,CeO 2当在较高温度(> 350°C)下硫酸化时,纳米棒会严重失活。进行了N 2吸附-解吸,XRD,HR-TEM,TG-DTA,拉曼和SO 2  + O 2吸附原位DRIFTS等一系列表征,研究了SO 2与纳米状CeO 2的相互作用。据透露,铈的形态2时在高温(> 350℃)的硫酸化的纳米棒被严重破坏,同时的CeO结构2纳米立方体相对相同的条件下是稳定的。此外,在CeO 2纳米棒上发现的硫酸盐种类比在CeO 2上更多纳米立方体,特别是大块的硫酸盐。结果,当在高温下硫酸化时,CeO 2纳米棒的NO去除效率大大降低。

更新日期:2020-08-01
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