Molybdenum dioxide (MoO₂) a kind of semi-metal material shows many unique properties, such as high melting point, good thermal stability, large surface area-to-volume ratio, high-density surface unsaturated atoms, and excellent conductivity. There is a strong connection between structural type and optoelectronic properties of 2D nanosheet. Herein, the rectangular and hexagonal types of thin and thick MoO₂ 2D nanosheets were successfully prepared from MoO₃ powder using two-zone chemical vapor deposition (CVD) with changing the experimental parameters, and these fabricated nanosheets displayed different colors under bright-field microscope, possess margins and smooth surface. The thickness of the blue hexagonal and rectangular MoO₂ nanosheets are ~ 25 nm and ~ 30 nm, respectively, while typical thickness of orange-colored nanosheet is around ~ 100 nm. Comparative analysis and investigations were carried out, and mix-crystal phases were indentified in thick MoO₂ as main matrix through Raman spectroscopy. For the first time, the emission bands obtained in thick MoO₂ nanosheets via a Cathodoluminescence (CL) system exhibiting special properties of semi-metallic and semi-conductors; however, no CL emission detected in case of thin nanosheets. The electrical properties of thin MoO₂ nanosheets with different morphologies were compared, and both of them demonstrated varying metallic properties. The resistance of thin rectangular nanosheet was ~ 25 Ω at ± 0.05 V while 64 Ω at ± 0.05 V was reported for hexagonal nanosheet, and observed lesser resistance by rectangular nanosheet than hexagonal nanosheet.

二氧化钼（MoO ₂）是一种半金属材料，具有许多独特的特性，如高熔点，良好的热稳定性，大的体积比表面积，高密度的表面不饱和原子和出色的导电性。二维纳米片的结构类型与光电特性之间存在紧密的联系。在此，通过改变实验参数的两区化学气相沉积（CVD）成功地从MoO ₃粉末中制备了矩形和六边形的MoO ₂ 2D纳米薄片，这些薄片在明亮的视野下显示出不同的颜色。 ，具有边距和光滑的表面。蓝色六角和矩形MoO ₂的厚度纳米片的厚度分别约为25 nm和30 nm，而橙色纳米片的典型厚度约为100 nm。进行了比较分析和研究，并通过拉曼光谱法确定了以厚MoO ₂为主要基质的混合晶体相。首次通过阴极发光（CL）系统在厚的MoO ₂纳米片中获得的发射带表现出半金属和半导体的特殊性能。然而，在纳米薄片的情况下，没有检测到CL发射。薄MoO ₂的电性能比较了具有不同形态的纳米片，并且两者均显示出不同的金属性能。薄的矩形纳米片的电阻在±0.05 V时为〜25Ω，而六角形纳米片的电阻为±0.05 V时为64Ω，矩形纳米片的电阻小于六角形纳米片。