Perovskite solar cells (PSCs) have attained considerable success within just a few recent years. This accomplishment is critically based on compositional modifications and morphology engineering of perovskite material or dependent upon prepared mesoporous-titanium dioxide (mp-TiO₂). However, no analysis of the antisolvent role used for crystallization of perovskite has been undertaken. Herein, we investigated the role of the antisolvent in the performance of hole transport layer (HTL)-free PSC (HTL-free PSC) based on the following sandwich structure: glass/fluorine-doped tin oxide (FTO)/compact-TiO₂ (c-TiO₂₎/mp-TiO₂/Perovskite (MAPI)/gold (Au). We studied perovskite layers with various porosities and layer thicknesses, and revealed that the generated pinholes had a major effect on the HTL-free PSC performance. A possible reason for this is that the pinhole in the MAPI layer does not allow the MAPI crystals to generate charge pathways to the TiO₂ layer. The MAPI layer prepared by chlorobenzene demonstrated a compact and pinhole-free highly crystalline MAPI layer with enhanced optical and electrical characteristics. However, the MAPI layers prepared by toluene and diethyl ether suffered from severe recombination issues at the MAPI/TiO₂ interconnect. The dark current/voltage (J–V) curve of the HTL-free PSC prepared using chlorobenzene shifted to higher voltage, suggesting a reduction of the backflow of charges at the interface. The J–V characteristics under illumination proved that the HTL-free PSC fabricated by chlorobenzene using as antisolvent in this study, had the best power conversion efficiency (PCE) of 5.65% along with open circuit voltage (V_oc), short circuit current (J_sc), and fill factor (FF) values of 0.8335 V, 11.964 mA/cm², and 0.56, respectively.

The enhancement in the performance of PSCs originates from improved perovskite film formation, more efficient electron charge extraction and reduced recombination process.

钙钛矿太阳能电池（PSC）在短短几年内就取得了相当大的成功。该成就至关重要地基于钙钛矿材料的组成修改和形态工程，或取决于所制备的中孔二氧化钛（mp-TiO ₂）。然而，尚未对用于钙钛矿结晶的抗溶剂作用进行分析。在本文中，我们基于以下夹层结构研究了抗溶剂在无空穴传输层（HTL）的PSC（无HTL的PSC）的性能中的作用：玻璃/掺杂氟的氧化锡（FTO）/紧凑型TiO ₂（c-TiO _2） / mp-TiO ₂/钙钛矿（MAPI）/黄金（Au）。我们研究了具有不同孔隙率和层厚度的钙钛矿层，并发现所产生的针孔对无HTL的PSC性能有重大影响。其可能的原因是，MAPI层中的针孔不允许MAPI晶体生成通往TiO ₂层的电荷通道。由氯苯制备的MAPI层显示出致密的，无针孔的高度结晶MAPI层，具有增强的光学和电学特性。然而，由甲苯和乙醚制备的MAPI层在MAPI / TiO ₂互连处遭受严重的重组问题。暗电流/电压（J – V）使用氯苯制备的不含HTL的PSC曲线移至较高电压，表明界面电荷的回流减少。光照下的J – V特性证明，本研究中以氯苯为反溶剂制备的无HTL的PSC具有5.65％的最佳功率转换效率（PCE），以及开路电压（V _oc），短路电流（J _sc）和填充因子（FF）分别为0.8335 V，11.964 mA / cm ²和0.56。

PSC性能的提高源自钙钛矿膜形成的改善，电子电荷的提取效率更高以及重组过程减少。