Defect information is critical for both fundamental research and industrial analysis of metals and semiconductors. Diffraction contrast is the basis for defect imaging using either X‐ray or electron microscopy. Taking the advantage of high resolution in electron microscopy techniques, here we evaluate the efficiency for diffraction contrast imaging based on scanning transmission electron microscopy. The working principle and application are demonstrated using the typical semiconductor material silicon as an example. The efficiency is improved at least an order of magnitude compared with conventional electron microscopy method.

中文翻译：

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快速缺陷表征：衍射对比扫描透射电子显微镜的效率。

缺陷信息对于金属和半导体的基础研究以及工业分析都至关重要。衍射对比是使用X射线或电子显微镜进行缺陷成像的基础。利用电子显微镜技术中高分辨率的优势，这里我们评估基于扫描透射电子显微镜的衍射对比成像效率。以典型的半导体材料硅为例说明其工作原理和应用。与常规电子显微镜方法相比，效率至少提高了一个数量级。