Abstract The electrical behavior of textured YBaCo2O5+δ thin layers (100, 150, and 240 nm) grown on SrTiO3 substrates was investigated by means of complex impedance and transport measurements. Strong dependence of the electrical properties of the layers on the frequency, temperature, and thickness was observed. A semiconducting-like behavior was verified for the investigated films. The impedance spectra (semicircle arcs) were well modeled in terms of equivalent electrical circuits. The circuital analysis allowed for distinguishing between capacitive and resistive contributions to the impedance. The insulating phase and the dielectric relaxation were modeled by means of a conventional resistor-capacitor element connected in parallel. The conductivity data was adequately fit to Jonscher's law, σac = σdc + Aωn. Values of the n exponent lower than 1 were obtained in the temperature range measured. The value of the real part of the dielectric permittivity (e′r) grew as the temperature was increased and the frequency lowered. An activation energy of ~70 meV was determined from the impedance data. High values of the dielectric loss (tanδ) were observed in the lower frequency region and at the higher temperatures measured. Separate measurements on blank SrTiO3 substrates were also carried out in the present study for comparison.

中文翻译：

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通过复阻抗谱测试织构 YBaCo2O5+δ 薄层的电性能

摘要 通过复阻抗和传输测量研究了在 SrTiO3 衬底上生长的织构 YBaCo2O5+δ 薄层（100、150 和 240 nm）的电学行为。观察到层的电特性对频率、温度和厚度的强烈依赖性。对于所研究的薄膜，验证了类似半导体的行为。根据等效电路对阻抗谱（半圆弧）进行了很好的建模。电路分析允许区分电容和电阻对阻抗的贡献。绝缘相和介电弛豫通过并联的传统电阻-电容元件建模。电导率数据充分符合 Jonscher 定律，σac = σdc + Aωn。在测量的温度范围内获得低于 1 的 n 指数值。介电常数（e'r）的实部值随着温度升高和频率降低而增大。从阻抗数据确定~70 meV 的活化能。在较低频率区域和较高测量温度下观察到较高的介电损耗 (tanδ) 值。在本研究中还对空白 SrTiO3 基材进行了单独测量以进行比较。在较低频率区域和较高测量温度下观察到较高的介电损耗 (tanδ) 值。在本研究中还对空白 SrTiO3 基材进行了单独测量以进行比较。在较低频率区域和较高测量温度下观察到较高的介电损耗 (tanδ) 值。在本研究中还对空白 SrTiO3 基材进行了单独测量以进行比较。