In this paper, a novel method has been proposed to implement a Carbon Nanotube Field-Effect Transistor (CNTFET) based with 8T SRAM cells 32 at nm technology and triple-value transistor memory cell. Instead of using a read buffer and a transmission gate, we have used a tri-state buffer, this reduces cell standby power. We have also used dynamic diode connection to implement the standard tri-state inverter (STI) gate instead of a transistor with a static diode connection. Then, the proposed memory cell, unlike the memory cell, is off while holding data 0 and 2 off, has been compared with a memory cell, simulation results using the HSPICE circuit simulator show that the cell stability has increased by 23.03% due to the use of dynamic diode connection transistors and, 14.36% of data storage power consumption “0″ and 32.15% data storage power consumption ”2″ is reduced due to the use of tri-state buffer. Also, the proposed memory cell provides a good SNM in a supply voltage range from 0 to 0.9 V, and also this scheme has a stable read and writes stability due to the variation diameter between the smallest squared inscribed between two VTC curves in the butterfly diagram.

在本文中，提出了一种新颖的方法来实现碳纳米管场效应晶体管（CNTFET），该晶体管基于nm技术的8T SRAM单元32和三值晶体管存储单元。我们没有使用读缓冲器和传输门，而是使用了三态缓冲器，这降低了电池待机功耗。我们还使用动态二极管连接来实现标准三态逆变器（STI）门，而不是采用静态二极管连接的晶体管。然后，与存储单元不同，拟议的存储单元与保持数据0和2处于关闭状态时处于关闭状态，并已与存储单元进行了比较。使用HSPICE电路模拟器进行的仿真结果表明，由于存储单元的稳定性提高了23.03％使用动态二极管连接晶体管，数据存储功耗的14.36％为“ 0”和32。由于使用了三态缓冲器，数据存储功耗“ 2”降低了15％。此外，建议的存储单元在0至0.9 V的电源电压范围内提供了良好的SNM，并且该方案由于蝶形图中两条VTC曲线之间的最小平方之间的直径变化而具有稳定的读写稳定性。 。