The ionization loss spectra of high-energy negatively charged particles which move in the planar channeling mode in a silicon crystal are studied with the use of numerical simulation. The case when the crystal thickness is on the order of the dechanneling length \(l_d\) is considered. It is shown that in this case the shape of the spectrum noticeably depends on \(l_d\). The evolution of various characteristic parameters of the spectrum with the change of \(l_d\) is investigated. A method of the experimental determination of \(l_d\) on the basis of the measurement of the ionization loss spectrum is proposed.

中文翻译：

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关于高能沟道负电荷粒子的电离损失谱

利用数值模拟研究了在硅晶体中以平面沟道模式移动的高能带负电粒子的电离损失谱。考虑了晶体厚度为去沟道长度\（l_d \）的量级的情况。结果表明，在这种情况下，频谱的形状明显取决于\（l_d \）。研究了谱的各种特征参数随\（l_d \）的变化。提出了一种基于电离损耗谱测量的实验确定\（l_d \）的方法。