We report transport properties of Sb2-xSnxTe3(x ≤ 0.05) single crystals, where the tuning of the charge carrier densities via Sn doping significantly improves the magnetoresistance (MR) and the thermoelectric (TE) properties. The MR increases significantly at 2 K forx= 0.01, which reduces considerably with further Sn doping atx= 0.05. The MR results below 90 K forx= 0.01 satisfy the semi-classical two-band approach of Kohler's rule, which does not satisfy the MR results forx= 0.05. At 300 K, the Seebeck coefficient (S) is positive and small forx= 0.01 and it changes the sign with the further increase in Sn doping atx= 0.05 at 300 K. The value of|S|is considerable with an enhancement of the thermoelectric power factor compared to the value forx= 0.01 at 300 K. Analysis of the Hall conductivity indicates the interplay between carrier mobilities and densities, leading to the tuning of MR and TE properties with Sn doping. These results demonstrate that thep-type Sb2Te3becomesn-type with a suitable doping engineering.

中文翻译：

---

通过调节 Sb2-xSnxTe3 (x ≤ 0.05) 晶体中的载流子浓度来研究正磁阻和热电特性之间的相互作用


我们报告了 Sb2-xSnxTe3(x ≤ 0.05) 单晶的输运特性，其中通过 Sn 掺杂调节载流子密度显着提高了磁阻 (MR) 和热电 (TE) 特性。当 x= 0.01 时 2 K 时 MR 显着增加，当 x= 0.05 时进一步掺杂 Sn 时，MR 显着降低。 x= 0.01 时低于 90 K 的 MR 结果满足科勒规则的半经典双带方法，但不满足 x= 0.05 时的 MR 结果。在 300 K 时，塞贝克系数 (S) 为正且较小（x= 0.01），并且随着 Sn 掺杂量的进一步增加（在 300 K 时 x= 0.05），其符号发生变化。随着热电性能的增强，|S| 的值相当可观。功率因数与 300 K 时 x= 0.01 的值相比。霍尔电导率的分析表明载流子迁移率和密度之间的相互作用，从而通过 Sn 掺杂调整 MR 和 TE 性能。这些结果表明，通过合适的掺杂工程，p型Sb2Te3可以变成n型。