We demonstrate strong coupling between a single quantum dot and a GaAs-based L4/3-type photonic crystal nanocavity. The L4/3 cavity supports a high theoretical Q factor (~8{\times}10^6), a small mode volume (~0.32 (\lambda/n)^3), and an electric field distribution with the maximum electric field lying within the host dielectric material, which facilitates strong coupling with a quantum dot. We fabricated L4/3 cavities and observed a high Q factor over 80,000 using photoluminescence measurement. We confirmed strong coupling between a single quantum dot and an L4/3 cavity with a Q factor of 33,000 by observing a clear anti-crossing in the spectra.

中文翻译：

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单个量子点和 L4/3 光子晶体纳米腔之间的强耦合

我们证明了单个量子点和基于 GaAs 的 L4/3 型光子晶体纳米腔之间的强耦合。L4/3 腔支持高理论 Q 因子（~8{\times}10^6）、小模式体积（~0.32 (\lambda/n)^3）以及具有最大电场的电场分布位于主体介电材料内，这有助于与量子点的强耦合。我们制造了 L4/3 腔并使用光致发光测量观察到超过 80,000 的高 Q 因子。我们通过在光谱中观察到清晰的反交叉，证实了单个量子点和 Q 因子为 33,000 的 L4/3 腔之间的强耦合。