This letter presents a low‐power and low‐phase‐noise 5‐GHz VCO fabricated in a standard CMOS 0.18‐μm process. The low power dissipation was achieved by using the PMOS cross‐coupled pair and G_m‐boosting topology, and the low phase noise was obtained by adding two pairs of switched capacitor array. The VCO consumed a dc power of 2.92 mW with the supply voltage of 1 V. The measured phase noises were − 104.6 dBc/Hz and − 117.4 dBc/Hz at 1 MHz offset frequency with switched off and on capacitances, respectively, which demonstrated 12.8‐dB improvement.

中文翻译：

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使用Gm升压和电容切换技术的低相位噪声和低功耗CMOS虚压VCO

这封信介绍了采用标准CMOS0.18μm工艺制造的低功耗，低相位噪声的5GHz VCO。通过使用PMOS交叉耦合对和G _m增强拓扑可实现低功耗，并通过添加两对开关电容器阵列获得低相位噪声。VCO在电源电压为1 V时消耗了2.92 mW的直流功率。在1 MHz偏移频率下，关闭和接通电容时，测得的相位噪声分别为− 104.6 dBc / Hz和− 117.4 dBc / Hz，这证明了12.8 ‐dB改善。