A novel half‐mode substrate integrated waveguide (HMSIW) based dual‐band bandpass filter (DBBPF) is proposed. Back to back connected two defected ground structure (DGS) resonators on the top layer of HMSIW cavity constitute the passband with two transmission zeros (TZs) at a lower frequency. The higher modes TE₃₀₁ and TE₃₀₂ of HMSIW cavity give the passband response at higher frequency using the mode shifting technique with slot perturbation. The source‐load coupling has been used to create finite frequency TZs to improve the selectivity of the second passband. Therefore, the proposed filter gives two widely separated passbands, center frequencies (CFs) at 5.83 and 18.1 GHz with an attenuation of greater than 10 dB between the passbands. The synthesized filter is fabricated using a low‐cost single layer PCB process, and the measured S‐parameters are almost mimic the EM‐simulation results.

中文翻译：

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宽分离的双频半模SIW带通滤波器

提出了一种基于半模基片集成波导（HMSIW）的新型双带通滤波器（DBBPF）。HMSIW腔体顶层上的两个背对背连接的两个缺陷接地结构（DGS）谐振器构成了具有较低频率的两个传输零点（TZ）的通带。更高模式TE ₃₀₁和TE ₃₀₂HMSIW谐振腔的谐振采用带缝隙扰动的模移技术在较高的频率下给出了通带响应。源-负载耦合已用于创建有限频率的TZ，以提高第二通带的选择性。因此，所提出的滤波器给出了两个大大分开的通带，分别为5.83和18.1 GHz的中心频率（CF），通带之间的衰减大于10 dB。合成滤波器是使用低成本的单层PCB工艺制造的，所测得的S参数几乎与EM仿真结果相似。